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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5622 2N5624 2N5626 2N5628 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For audio and general-purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL PARAMETER VCBO CHA IN Emitter-base voltage Collector current Collector-base voltage GE S N 2N5622 2N5624/5626 2N5628 2N5622 2N5624/5626 2N5628 EMIC Open emitter Open base CONDITIONS OND TOR UC VALUE 80 100 120 60 80 100 UNIT V VCEO Collector-emitter voltage V VEBO IC PD Tj Tstg Open collector 5 10 V A W ae ae Total power dissipation Junction temperature Storage temperature TC=25ae 100 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N5622 VCEO(SUS) Collector-emitter sustaining voltage 2N5624/5626 2N5628 VCEsat VBE ICBO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current 2N5622 2N5624 2N5626 2N5628 SYMBOL CONDITIONS MIN 60 TYP. MAX UNIT IC=50mA ;IB=0 80 100 V IC=10A; IB=1A IC=5A ; VCE=5V VCB=Rated VCBO; IE=0 VEB=5V; IC=0 1.5 1.5 0.1 0.1 70 200 90 V V mA mA hFE DC current gain 2N5622/5626 IC=5A ; VCE=5V 2N5624/5628 2N5622/5626 fT Transition frequency HAN INC 2N5624/5628 SEM GE IC=1A ; VCE=12V OND IC 30 40 TOR UC MHz 30 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5622 2N5624 2N5626 2N5628 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 |
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